Recently, Professor Min Qiu's team achieved a significant breakthrough in the field of silicon carbide (SiC) micro-nano optics. The research paper titled "4H-SiC Metalens: Mitigating Thermal Drift Effect in High-Power Laser Irradiation," authored by PhD student Chen Boqu (Class of 2021), has been accepted by the journal Advanced Materials. This paper introduces a novel, compact SiC photonic device, opening new avenues for enhancing the performance and expanding the applications of high-power laser systems.
High-power laser technology is widely applied in manufacturing, medical, communications, and military fields. However, traditional laser systems often face significant challenges related to heat dissipation and thermal accumulation, which degrade optical performance and limit the reliability and efficiency of these systems under harsh conditions.
To address this technical limitation, the team innovatively developed a 4H SiC metalens device. Due to its high refractive index, high thermal conductivity, and high hardness, SiC is an ideal material for such applications. The research team utilized established semiconductor fabrication techniques to achieve large-scale, high-precision, and high aspect-ratio SiC nanopillar structures. Compared to conventional objective lens, the SiC metalens not only effectively mitigates the thermal drift effect but also significantly enhances optical design flexibility, all while maintaining a more compact structure.
The paper systematically details the design principles, experimental procedures, and performance analysis of the SiC metalens. Experimental results demonstrate that the device exhibits exceptional optical stability under prolonged high-power laser irradiation, showcasing remarkable resistance to thermal drift. This breakthrough provides a novel technological solution and new application potential for optoelectronic devices, micro-nano manufacturing, and other related fields.
The successful publication of this research not only offers a new direction for the development of SiC photonic devices but also presents a groundbreaking approach to solving core technological challenges in the high-power laser field.
Paper Link：https://onlinelibrary.wiley.com/doi/10.1002/adma.202412414
